MUBW10-06A7【PDF 2/8 页】CONVERTER/BRAKE/INVERTER 1.9VCE

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MUBW 10-06 A7

Output Inverter T1 - T6

Equivalent Circuits for Simulation

Symbol

Conditions

Maximum Ratings

Conduction

V CES

V GES

V GEM

T VJ = 25°C to 150°C

Continuous

Transient

600

± 20

± 30

V

V

V

I C25

I C80

RBSOA

t SC

(SCSOA)

T C = 25°C

T C = 80°C

V GE = ± 15 V; R G = 82 ? ; T VJ = 125°C

Clamped inductive load; L = 100 μH

V CE = V CES ; V GE = ± 15 V; R G = 82 ? ; T VJ = 125°C

non-repetitive

20

15

I CM = 20

V CEK ≤ V CES

10

A

A

A

μs

D11 - D16

Rectifier Diode (typ. at T J = 125°C)

V 0 = 1.11V; R 0 = 19 m ?

T1 - T6 / D1 - D6

IGBT (typ. at V GE = 15 V; T J = 125°C)

V 0 = 0.89 V; R 0 = 122 m ?

P tot

T C = 25°C

85

W

Free Wheeling Diode (typ. at T J = 125°C)

V 0 = 1.09 V; R 0 = 12 m ?

B4

Symbol

Conditions

Characteristic Values

(T VJ = 25 ° C, unless otherwise specified)

min. typ. max.

T7 / D7

IGBT (typ. at V GE = 15 V; T J = 125°C)

V 0 = 0.89 V; R 0 = 122 m ?

V CE(sat)

V GE(th)

I CES

I C = 10 A; V GE = 15 V; T VJ = 25°C

T VJ = 125°C

I C = 0.4 mA; V GE = V CE

V CE = V CES ; V GE = 0 V; T VJ = 25°C

4.5

1.9

2.1

2.3

6.5

0.6

V

V

V

mA

Free Wheeling Diode (typ. at T J = 125°C)

V 0 = 1.07 V; R 0 = 23 m ?

Thermal Response

T VJ = 125°C

0.4

mA

I GES

t d(on)

V CE = 0 V; V GE = ± 20 V

35

200

nA

ns

t r

t d(off)

t f

E on

E off

C ies

Q Gon

R thJC

Inductive load, T VJ = 125°C

V CE = 300 V; I C = 10 A

V GE = ±15 V; R G = 82 ?

V CE = 25 V; V GE = 0 V; f = 1 MHz

V CE = 300V; V GE = 15 V; I C = 10 A

(per IGBT)

35

230

30

0.4

0.3

600

39

ns

ns

ns

mJ

mJ

pF

nC

1.5 K/W

D11 - D16

Rectifier Diode (typ.)

C th1 = 0.093 J/K; R th1 = 1.212 K/W

C th2 = 0.778 J/K; R th2 = 0.258 K/W

T1 - T6 / D1 - D6

IGBT (typ.)

Output Inverter D1 - D6

C th1 = 0.065 J/K; R th1 = 1.766 K/W

C th2 = 0.636 J/K; R th2 = 0.344 K/W

Symbol

Conditions

Maximum Ratings

Free Wheeling Diode (typ.)

I F25

I F80

T C = 25°C

T C = 80°C

30

20

A

A

C th1 = 0.065 J/K; R th1 = 1.766 K/W

C th2 = 0.636 J/K; R th2 = 0.344 K/W

T7 / D7

IGBT (typ.)

Symbol

Conditions

Characteristic Values

min. typ. max.

C th1 = 0.071 J/K; R th1 = 1.211 K/W

C th2 = 0.726 J/K; R th2 = 0.293 K/W

V F

I RM

t rr

I F = 10 A; V GE = 0 V; T VJ = 25°C

T VJ = 125°C

I F = 15 A; di F /dt = -400 A/μs; T VJ = 125°C

V R = 300 V; V GE = 0 V

1.7

1.2

13

90

2.0

V

V

A

ns

Free Wheeling Diode (typ.)

C th1 = 0.043 J/K; R th1 = 2.738 K/W

C th2 = 0.54 J/K; R th2 = 0.462 K/W

R thJC

(per diode)

2.1 K/W

? 2002 IXYS All rights reserved

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